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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO = 80 V *DC Current Gain-- : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A *Complement to Type MJE703
MJE803
APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
VALUE 80 80 5 4 0.1 40 150 -55~150
UNIT V V V A A W
PC Ti Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.13 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
MJE803
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 40mA
B
2.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB=-40mA
B
3.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= 2A; VCE= 3V
2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 4A; VCE= -3V
3.0
V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100 VEB= 5V; IC= 0
0.1 0.1 0.5 2.0
mA
ICBO
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
mA
hFE-1
DC Current Gain
IC= 2A ; VCE= 3V
750
hFE-2
DC Current Gain
IC= 4A ; VCE= 3V
100
isc Websitewww.iscsemi.cn


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